Referenced Items are not available for this document.
Ring oscillators having integrated-optical readout are realized in GaAs-AlGaAs field-effect transistor self-electro-optic-effect-device (FET-SEED) technology-a monolithic integration technology for FET's and normal-incidence multiple-quantum-well modulators and detectors. Good agreement between simulated and measured DC-inverter-transfer characteristics is shown. At one bias point, ring oscillator frequencies correspond to unity fan-in and fan-out delay values of 129.5 ps/stage. The power-delay product at this bias point was 306 fj. Measurements were made on circuits whose transistors had a transconductance of about 80 mS/mm. Simulations of inverter delay are discussed, including load capacitances, and are found to be in good agreement with experiment.<
Published in:
Electron Device Letters, IEEE
(Volume:16
,
Issue:
2
)
Date of Publication: Feb. 1995
- Page(s):
- 52 - 54
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4887748
- Digital Object Identifier :
- 10.1109/55.386030
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb. 1995
- Sponsored by :
- IEEE Electron Devices Society
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