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Novel high speed circuit structures for BiCMOS environment

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2 Author(s)
Gu, R.X. ; VLSI Res. Group, Waterloo Univ., Ont., Canada ; Elmasry, M.I.

Novel high speed BiCMOS circuits including ECL/CMOS, CMOS/ECL interface circuits and a BiCMOS sense amplifier are presented. A generic 0.8 μm complementary BiCMOS technology has been used in the circuit design. Circuit simulations show superior performance of the novel circuits over conventional designs. The time delays of the proposed ECL/CMOS interface circuits, the dynamic reference voltage CMOS/ECL interface circuit and the BiCMOS sense amplifier are improved by 20, 250, and 60%, respectively. All the proposed circuits maintain speed advantage until the supply voltage is scaled down to 3.3 V

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:30 ,  Issue: 5 )