Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Hot-carrier transport in thin-film SOI MOSFETs at room and cryogenic temperatures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Balestra, F. ; Fac. of Eng., Tohoku Univ., Sendai, Japan ; Matsumoto, T. ; Nakabayashi, H. ; Tsuno, M.
more authors

The influence of the substrate bias on the hot-carrier effects in thin-film SOI MOSFETs is investigated. It is shown that the high-field properties strongly depend on the substrate bias, with a substantial decrease of the impact ionisation rate for volume inversion operation, which is very promising for the reduction of hot-carrier-induced degradation of double-gate SOI MOSFETs. Furthermore, the analysis of the electrical properties of these devices in a wide temperature range allows us to propose a satisfactory model for the hot-carrier behaviours, which highlights the role of the substrate bias for control of the high-field region and thus, of the nonstationary transport in thin Si films

Published in:

Electronics Letters  (Volume:31 ,  Issue: 9 )