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Influence of Fowler-Nordheim tunnelling current on the strong inversion high-frequency capacitance of thin-insulator N-type metal-oxide-semiconductor structures

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4 Author(s)
Xu, M. ; Dept of Comput. Sci. & Technol., Beijing Univ., China ; Tan, C. ; He, Y. ; Wang, Y.

A simple analysis is presented of the effect of Fowler-Nordheim tunnelling current on thin-insulator N-type metal-oxide-semiconductor capacitance in the strong inversion region. One mechanism responsible for the increase of capacitance under Fowler-Nordheim tunnelling current injection is described. The theoretical results are compared with the experimental data on thin-insulator N-type metal-oxide-semiconductor capacitors

Published in:

Electronics Letters  (Volume:31 ,  Issue: 8 )