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High-transconductance p-type SiGe modulation-doped field-effect transistor

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6 Author(s)
Arafa, M. ; Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA ; Ismail, K. ; Fay, P. ; Chu, J.O.
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High-transconductance 1.5 μm-gate-length p-type modulation-doped field-effect transistors (MODFETs) have been fabricated using standard optical lithography on a high hole-mobility SiGe heterostructure grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). A maximum DC extrinsic (intrinsic) transconductance of 95 mS/mm (138 mS/mm) at room temperature has been achieved, which to our knowledge is the highest for p-type field-effect transistors at this gate length. A unity current-gain frequency ft of 2.1 GHz has been measured. The gate leakage current was quite low and was of the order of a few μA/mm. These enhancement-mode devices exhibit reasonable pinch-off characteristics

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Electronics Letters  (Volume:31 ,  Issue: 8 )