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Effects of anneal temperature on the electrical characteristics of nickel-based ohmic contacts to β-SiC

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3 Author(s)
D. O. Arugu ; Mater. Sci. Res. Center of Excellence, Howard Univ., Washington, DC, USA ; G. L. Harris ; C. Taylor

A study is presented of the effects of anneal temperature on the electrical characteristics of nickel-based ohmic contacts to β-SiC. Patterned metal structures on SiC films were annealed at temperatures ranging from 400 to 1200°C, and electrically probed. The lowest contact resistance was 1.41×10-4 Ωcm2 at 1000°C

Published in:

Electronics Letters  (Volume:31 ,  Issue: 8 )