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Browse Journals & Magazines > Electronics Letters ...> Volume:31 Issue:8 Help

Deep level characterisation in GaAs FETs by means of the frequency dispersion of the output impedance

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4 Author(s)
Reynoso-Hernandez, J.A. ; Div. de Fisica Aplicada, CICESE, Ensenada, Mexico ; Escotte, L. ; Plana, R. ; Graffeuil, J.

Based on measurements of output impedance against frequency at different temperatures, a new technique for deep level characterisation in microwave FETs is proposed. The procedure for calculating the time constant τ related to each trap is presented and from an Arrhenius plot, the respective activation energies are computed

Published in:
Electronics Letters  (Volume:31 ,  Issue: 8 )

Date of Publication: 13 Apr 1995

Page(s):
677 - 678
ISSN :
0013-5194
INSPEC Accession Number:
4947856
Digital Object Identifier :
10.1049/el:19950465
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
13 Apr 1995
Sponsored by :
Institution of Engineering and Technology

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