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Deep level characterisation in GaAs FETs by means of the frequency dispersion of the output impedance

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4 Author(s)
Reynoso-Hernandez, J.A. ; Div. de Fisica Aplicada, CICESE, Ensenada, Mexico ; Escotte, L. ; Plana, R. ; Graffeuil, J.

Based on measurements of output impedance against frequency at different temperatures, a new technique for deep level characterisation in microwave FETs is proposed. The procedure for calculating the time constant τ related to each trap is presented and from an Arrhenius plot, the respective activation energies are computed

Published in:

Electronics Letters  (Volume:31 ,  Issue: 8 )