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Recessed-gate InGaAs MESFETs with an AlAs etch-stop layer

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3 Author(s)
Liao, M.P. ; Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA ; East, J.R. ; Haddad, G.I.

The authors have fabricated InGaAs MESFETs with a double selective gate recess process using a thin AlAs layer. Very low gate leakage is obtained since the gates are not in contact with the mesa sidewall. 1 μm×100 μm InGaAs MESFETs exhibit a transconductance, fT and fmax of 215 mS/mm, 24 GHz, and 70 GHz, respectively

Published in:

Electronics Letters  (Volume:31 ,  Issue: 8 )