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Browse Journals & Magazines > Electronics Letters ...> Volume:31 Issue:8 Help

Low-threshold mesa-etched vertical-cavity InGaAs/GaAs surface-emitting lasers grown by MOCVD

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7 Author(s)
Mukaihara, T. ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan ; Hayashi, Y. ; Hatori, N. ; Ohnoki, N.
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The authors have demonstrated a low threshold current of 0.33 mA and a threshold current density of 380 A/cm2 for MOCVD-grown InGaAs/GaAs vertical-cavity surface-emitting lasers with a pillar etched structure. The thermal characteristic of the fabricated device including thermal resistance and junction temperature rise is also discussed. Judging from this experiment, further reduction of threshold current can be expected by reducing nonradiative recombination and electrical resistance

Published in:
Electronics Letters  (Volume:31 ,  Issue: 8 )

Date of Publication: 13 Apr 1995

Page(s):
647 - 648
ISSN :
0013-5194
INSPEC Accession Number:
4947836
Digital Object Identifier :
10.1049/el:19950431
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
13 Apr 1995
Sponsored by :
Institution of Engineering and Technology

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