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Low-threshold mesa-etched vertical-cavity InGaAs/GaAs surface-emitting lasers grown by MOCVD

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7 Author(s)
T. Mukaihara ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan ; Y. Hayashi ; N. Hatori ; N. Ohnoki
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The authors have demonstrated a low threshold current of 0.33 mA and a threshold current density of 380 A/cm2 for MOCVD-grown InGaAs/GaAs vertical-cavity surface-emitting lasers with a pillar etched structure. The thermal characteristic of the fabricated device including thermal resistance and junction temperature rise is also discussed. Judging from this experiment, further reduction of threshold current can be expected by reducing nonradiative recombination and electrical resistance

Published in:

Electronics Letters  (Volume:31 ,  Issue: 8 )