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Gain measurement of high characteristic temperature 1.3 μm GaInAsP/InP strained-layer quantum well lasers with temperature dependent reflectivity (TDR) mirror

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5 Author(s)
Kasukawa, A. ; Res. & Dev. Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Iwai, N. ; Yamanaka, N. ; Hosotani, A.
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By comparing the optical gain of 1.3 μm strained-layer quantum well lasers with characteristic temperatures T0 of 150 K (high) and 60 K (typical), it is found that temperature insensitive net gain plays an important role in reducing the temperature sensitivity of the threshold current. The resonance frequency for high T0 lasers exhibits temperature insensitivity, resulting from the temperature insensitive net gain characteristics

Published in:

Electronics Letters  (Volume:31 ,  Issue: 8 )