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Browse Journals & Magazines > Electronics Letters ...> Volume:31 Issue:8 Help

Gain measurement of high characteristic temperature 1.3 μm GaInAsP/InP strained-layer quantum well lasers with temperature dependent reflectivity (TDR) mirror

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5 Author(s)
Kasukawa, A. ; Res. & Dev. Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Iwai, N. ; Yamanaka, N. ; Hosotani, A.
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By comparing the optical gain of 1.3 μm strained-layer quantum well lasers with characteristic temperatures T0 of 150 K (high) and 60 K (typical), it is found that temperature insensitive net gain plays an important role in reducing the temperature sensitivity of the threshold current. The resonance frequency for high T0 lasers exhibits temperature insensitivity, resulting from the temperature insensitive net gain characteristics

Published in:
Electronics Letters  (Volume:31 ,  Issue: 8 )

Date of Publication: 13 Apr 1995

Page(s):
644 - 645
ISSN :
0013-5194
INSPEC Accession Number:
4947834
Digital Object Identifier :
10.1049/el:19950381
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
13 Apr 1995
Sponsored by :
Institution of Engineering and Technology

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