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Design of high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical divergence angle of 18°

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2 Author(s)
Temmyo, J. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Sugo, M.

Epitaxial structures were designed for high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical-divergence emitting angle of 18°. A maximum free-space optical output of >500 mW and a singlemode-fibre coupled power of >250 mW were obtained

Published in:

Electronics Letters  (Volume:31 ,  Issue: 8 )

Date of Publication:

13 Apr 1995

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