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Circuit simulation of resonant tunneling devices using NDR-SPICE

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3 Author(s)
Mohan, S. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Mazumder, P. ; Haddad, G.I.

NDR-SPICE is an enhanced version of the SPICE-3E circuit simulator, containing models for several resonant tunneling devices, including Resonant Tunneling Diodes, Resonant Tunneling Transistors, Multiple Peak Resonant Tunneling Diodes, Resonant Tunneling Bipolar Transistors, and Resonant Tunneling Hot Electron Transistors. Provision has also been made for simulating any new S-terminal device with negative differential resistance (NDR) characteristics. All the device models use a table-driven approach where tables of the device I-V characteristics are obtained either through direct measurements or through quantum simulation. Linear interpolation is performed between the tabulated points but a quadratic interpolation option is also provided for MRTD models. The software contains improved algorithms for convergence with NDR and piecewise linear characteristics during DC and transient analysis. While all previously demonstrated and published models for these devices have been external or macro-models, the new models incorporated into NDR-SPICE are internal models, allowing for faster simulation with better control and accuracy.<>

Published in:

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Date of Conference:

11-14 Dec. 1994