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Performance and hot-carrier reliability of N- and P-MOSFETs with rapid thermally NO-nitrided SiO/sub 2/ gate dielectrics

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6 Author(s)
Bhat, M. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Wristers, D. ; Yan, J. ; Han, L.K.
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This paper reports on the performance and hot-carrier reliability of N- and P-channel MOSFET's with oxynitride gate dielectrics fabricated by rapid thermal nitridation of thermally grown SiO/sub 2/ in pure nitric oxide (NO) ambient. NO nitridation results in an increase in the nitrogen (N) incorporation in the dielectric without a significant increase in oxide thickness. High field electron mobility is found to increase with NO-nitridation while hole mobility is only slightly degraded. Hot-carrier reliability of both N- and P-channel MOSFETs is found to be significantly enhanced with increasing NO-nitridation. A 1000/spl deg/C, 10-second NO-anneal is found to be the optimum nitridation condition since, compared to control oxide devices, these devices showed comparable electron and hole mobility but significantly enhanced hot-carrier immunity.<>

Published in:

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Date of Conference:

11-14 Dec. 1994