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Analysis of parameter extraction techniques for VLSI interconnect reliability studies using microscopic computer simulation

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3 Author(s)
Trattles, J.T. ; Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK ; O'Neill, A.G. ; Mecrow, B.C.

Drift velocity, time-to-failure and resistometric techniques for determining interconnect reliability and extracting material parameters are studied using microscopic computer simulation. The accuracy of the drift velocity method is shown to be extremely sensitive to the assumptions used: the most commonly used technique is unsuitable for estimating the activation energy. Time-to-failure and classic resistometric models are also unsuitable for extracting the activation energy. Results indicate a relationship between the drift velocity threshold current density and the probability of interconnect failure.<>

Published in:

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Date of Conference:

11-14 Dec. 1994