Referenced Items are not available for this document.
A new approach is to provide accurate simulation of both oxidation topography and mechanical stress in LOCOS-derived isolation structures forecast for 0.25 /spl mu/m CMOS is presented. Advanced modelling and characterisation have been used to calibrate 2D oxidation and stress analysis models with account of the measurement instrumental response function. A revision to the mechanical properties of thin nitride and oxide layers is proposed to explain the results.<
Published in:
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Date of Conference: 11-14 Dec. 1994
- Page(s):
- 877 - 880
- Meeting Date :
- 11 Dec 1994-14 Dec 1994
- ISSN :
- 0163-1918
- Print ISBN:
- 0-7803-2111-1
- INSPEC Accession Number:
- 4905063
- Conference Location :
- San Francisco, CA, USA
- Digital Object Identifier :
- 10.1109/IEDM.1994.383273
- Product Type:
- Conference Publications
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