By Topic

1.3 /spl mu/m monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Hurm, V. ; Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany ; Benz, W. ; Berroth, M. ; Fink, T.
more authors

The first 1.3 /spl mu/m monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output the transimpedance is 26.8 k/spl Omega/. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.<>

Published in:

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Date of Conference:

11-14 Dec. 1994