By Topic

Measurement and extraction for parameters fχ and γ of noise in bipolar transistors-Based on measuring the power spectral density of noise current

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
T. Luo ; Dept. of Radio Eng., Southeast Univ., Nanjing, China

The main part of low-frequency noise in bipolar transistors is the 1/f noise. Its important parameters fχ and γ are considered. A method of measurement and extraction for noise parameters fχ and γ is presented. It is based on low-frequency current noise spectra measurement and on applying the weighted least square method. In the measurement system a fast Fourier transform analyzer is used to measure noise power spectra, and a scanning frequency sine signal method is used to measure the transfer function. Highly accurate results are obtained. An example and results are given

Published in:

Instrumentation and Measurement Technology Conference, 1993. IMTC/93. Conference Record., IEEE

Date of Conference:

18-20 May 1993