By Topic

A 94-GHz monolithic balanced power amplifier using 0.1-μm gate GaAs-based HEMT MMIC production process technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Aust, M. ; Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; Wang, H. ; Biedenbender, M. ; Lai, R.
more authors

A monolithic W-band two-stage balanced power amplifier has been developed using 0.1-μm AlGaAs-InGaAs-GaAs pseudomorphic T-gate power HEMT technology. This monolithic power amplifier has demonstrated an output power of 102 mW and a small signal gain of 9 dB with input/output return losses of better than 10 dB at 94 GHz. Moreover, this monolithic chip is fabricated using production GaAs-based HEMT MMIC technology and a good yield is obtained. The circuit design relies on extensive EM analysis of matching structures and accurate device modeling. The success of this monolithic circuit development indicates the maturity of power HEMT MMIC technology at W-band.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:5 ,  Issue: 1 )