Referenced Items are not available for this document.
A monolithic W-band two-stage balanced power amplifier has been developed using 0.1-μm AlGaAs-InGaAs-GaAs pseudomorphic T-gate power HEMT technology. This monolithic power amplifier has demonstrated an output power of 102 mW and a small signal gain of 9 dB with input/output return losses of better than 10 dB at 94 GHz. Moreover, this monolithic chip is fabricated using production GaAs-based HEMT MMIC technology and a good yield is obtained. The circuit design relies on extensive EM analysis of matching structures and accurate device modeling. The success of this monolithic circuit development indicates the maturity of power HEMT MMIC technology at W-band
Published in:
Microwave and Guided Wave Letters, IEEE
(Volume:5
,
Issue:
1
)
Date of Publication: Jan 1995
- Page(s):
- 12 - 14
- ISSN :
- 1051-8207
- INSPEC Accession Number:
- 4856353
- Digital Object Identifier :
- 10.1109/75.382375
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan 1995
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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