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Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system

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4 Author(s)
Shen, J. ; Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA ; Kramer, G. ; Tehrani, S. ; Goronkin, H.

We have fabricated SRAM's based on resonant interband tunneling diodes in the InAs/AlSb/GaSb material system. The bistability and the switching principles are demonstrated. Numerical simulations of the memory characteristics of the SRAM cell are performed and used for comparing with experiments. Several key issues involving the applications of the device are also discussed.<>

Published in:

Electron Device Letters, IEEE  (Volume:16 ,  Issue: 5 )