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Validity range estimate of the asymptotic expansion approach for the modeling of minority-carrier injection into heavily doped emitters

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1 Author(s)
N. Rinaldi ; Dept. of Eelctron. Eng., Naples Univ., Italy

A detailed analysis of the accuracy of the asymptotic expansion approach is carried out. A simple methodology for an accurate evaluation of the validity range of the approximate expressions for the calculation of the current injected into heavily doped semiconductor regions is presented. The validity range can be set as a function of the desired accuracy

Published in:

IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 5 )