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Influence of contacts on the hold-off voltage and recovery of electron-beam activated gallium arsenide switches

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3 Author(s)
M. K. Kennedy ; Phys. Electron. Res. Inst., Old Dominion Univ., Norfolk, VA, USA ; R. P. Brinkmann ; K. H. Schoenbach

The dark current, the current gain, and the recovery behavior of electron-beam controlled gallium arsenide bulk switches was measured for various contact configurations. With non-injecting contacts, the pulsed hold-off voltage and the threshold voltage for current lock-on was found to be higher by more than a factor of 3, compared to systems with injecting contacts. Additionally, the switch gain could be increased by a factor of 3 by doping the electron-beam irradiated face of the switch with zinc

Published in:

IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 5 )