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An analytical drain current model considering both electron and lattice temperatures simultaneously for deep submicron ultrathin SOI NMOS devices with self-heating

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5 Author(s)
Yu-Guang Chen ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Shyh-Yih Ma ; J. B. Kuo ; Zhiping Yu
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This paper reports a closed-form analytical drain current model considering both electron and lattice temperatures simultaneously using a quasi-two-dimensional approach for deep submicron ultrathin SOI NMOS devices. As verified by the experimental data, the closed-form analytical model shows a good predication of the negative differential resistance behavior. Based on the analytical model, with a channel length of <0.2 μm, both the effective electron temperature and the lattice temperature are important in determining the negative differential resistance

Published in:

IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 5 )