Referenced Items are not available for this document.
In order to evaluate the velocity overshoot phenomenon in the deep submicron MOS devices, the energy balance equation should be incorporated with the drift-diffusion equation that includes thermoelectric diffusion. This paper presents an analytical current model for deep submicron MOS devices by solving the energy balance equation. Our model results show good agreement with experimental results. We have successfully derived the drain current model composed of drift and thermoelectric currents
Published in:
Electron Devices, IEEE Transactions on
(Volume:42
,
Issue:
5
)
Date of Publication: May 1995
- Page(s):
- 864 - 869
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4953267
- Digital Object Identifier :
- 10.1109/16.381981
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1995
- Sponsored by :
- IEEE Electron Devices Society
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