Referenced Items are not available for this document.
A novel method using the charge pumping technique for extracting the effective channel length of MOSFET devices is presented, in which the effective area approach is used and the edges of the area are defined clearly. It is shown that the extracted effective channel length is independent of the measuring biases and the proposed new method is simple, accurate, and reliable, as compared to those using the I-V method. With the knowledge of the device dopant profiles, the extracted channel length with 0.01 μm accuracy can be achieved. Moreover, the proposed method is applicable to either n- or p-channel, conventional or LDD, surface or buried channel MOSFET's
Published in:
Electron Devices, IEEE Transactions on
(Volume:42
,
Issue:
5
)
Date of Publication: May 1995
- Page(s):
- 856 - 863
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4953266
- Digital Object Identifier :
- 10.1109/16.381980
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1995
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
