By Topic

Monte-Carlo study of high-frequency, large-signal transport parameters for physics based device simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Schroeder, W.L. ; Dept. of Electr. Eng., Duisburg Univ., Germany ; Wolff, I.

High-frequency large-signal electron transport properties are studied by Monte-Carlo simulation considering n-GaAs as a model problem. It is demonstrated that the use of steady-state transport parameters is inadequate for simulating device operation at microwave and millimeter wave frequencies. The error of the relaxation time approximation, as commonly used in physics based device modeling, is investigated and possible improvements are indicated. A novel effective large-signal mobility approximation is proposed for simplified transport models in the upper microwave and millimeter wave range

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 5 )