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Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

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4 Author(s)
Ma, C.L.F. ; Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada ; Deen, M.J. ; Tarof, L.E. ; Yu, J.C.H.

In this paper, we investigate temperature dependence of breakdown voltage Vbr from -40 to 110°C in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's) with a range of device parameters. The experimental data shows that Vbr is approximately a linear function of temperature, with a temperature coefficient ηexp between 0.13 and 0.16 V/°C. A physical model is developed and it demonstrates that Vbr indeed varies linearly with temperature with a temperature coefficient ηthe about 0.155 V/°C. It also explains successfully the small variation of ηexp among the APD's. Good agreement between the physical model predictions and experimental data of published InP-based APD's is also obtained. This good agreement demonstrates that the proposed physical model is appropriate to model the temperature dependent characteristics in any InP-based APD's

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 5 )

Date of Publication:

May 1995

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