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Thermal and reverse base current effects on heterojunction bipolar transistors and circuits

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1 Author(s)
Jiann-Shiun Yuan ; Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel-Poon equations to account for device self-heating, base current reversal, and the collector-emitter offset voltage. It is shown that self-heating has implications for the cutoff frequency of the HBT, for the frequency response of a small-signal amplifier, and also for the thermal stability of a current mirror circuit

Published in:

IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 5 )