System Maintenance:
There may be intermittent impact on performance while updates are in progress. We apologize for the inconvenience.
By Topic

Thermal and reverse base current effects on heterojunction bipolar transistors and circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Yuan, J.-S. ; Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel-Poon equations to account for device self-heating, base current reversal, and the collector-emitter offset voltage. It is shown that self-heating has implications for the cutoff frequency of the HBT, for the frequency response of a small-signal amplifier, and also for the thermal stability of a current mirror circuit

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 5 )