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High-power and high-efficiency 1.3 μm InAsP compressively-strained MQW lasers at high temperatures

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11 Author(s)
Oohashi, H. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Seki, S. ; Hirono, T. ; Sugiura, H.
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A high output power of 37 mW and high slope efficiency of more than 0.55 W/A at 90°C has been obtained by using 1.05 μm InGaAsP barrier layers with optimised composition for 1.3 μm InAsP compressively-strained MQW laser diodes

Published in:

Electronics Letters  (Volume:31 ,  Issue: 7 )