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Multi-wafer MOCVD growth of highly uniform InGaAsP strained quantum well structure for low threshold 1.3 μm lasers

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8 Author(s)
Mori, K. ; Mitsubishi Electric Corp., Itami, Hyogo, Japan ; Takemi, M. ; Takiguchi, T. ; Goto, K.
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The authors demonstrated a successful multi-wafer growth for the 1.3 μm InGaAsP strained multiple quantum well (MQW) lasers. Excellent uniformity of composition and thickness was realized by optimizing the growth conditions. The standard deviation of photoluminescence (PL) wavelength of InGaAsP layer over a 2 inch wafer is 4 nm, which is the lowest value for the multi-wafer growth. For a strained MQW structure, the standard deviation in PL wavelength of 7nm has been obtained. Buried-heterostructure lasers have been fabricated using the multi-wafer metal-organic chemical vapor deposition growth. The lasers exhibit very low threshold current over wide temperature range and low operating current of 26 mA was obtained even at 80°C with 5 mW continuous wave (CW) output

Published in:

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Date of Conference:

19-22 Apr 1993