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Control of structure and properties of compound semiconductor interfaces by Si interface control layer

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4 Author(s)
Hasegawa, H. ; Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan ; Kodama, S. ; Koyanagi, K. ; Akazawa, M.

The authors review the current status of recent attempts to control the structure and properties of compound semiconductor interfaces by an ultrathin Si interface control layer. Surface and interface states in the energy gap cause many unwanted effects including the so-called Fermi level pinning phenomenon, which is discussed. Control of insulator-semiconductor, metal-semiconductor, and semiconductor-semiconductor interfaces are considered

Published in:

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Date of Conference:

19-22 Apr 1993

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