Close category search window
 

Growth and properties of InGaAs ternary bulk crystals

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Nakajima, K. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Kusunoki, T. ; Kitahara, K. ; Ishikawa, H.

The authors have developed a double crucible liquid encapsulated Czochralski (LEC) method with a continuous supply of solute elements. The controllability of the supply of solute elements can be improved by this method. A 5 cm long InGaAs ternary bulk crystal has been grown at a constant temperature by the LEC method with a supply of only GaAs to growth melt. The X-ray, electrical and optical results imply that the quality of the InGaAs bulk crystals is as high as the LEC grown GaAs crystals on the market

Published in:
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Date of Conference: 19-22 Apr 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.