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MeV ion implantation for electrical isolation of p+ InP epi-layers

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6 Author(s)
Ridgway, M.C. ; Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia ; Davies, M. ; Sedivy, J.Z. ; Vandenberg, R.
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Electrical isolation of p+-InP epi-layers with B, O and Fe ion implantation at MeV energies has been investigated. For each of the three ion species, sheet resistance (Rs) values of 5-8 × 106 Ω/square were attained after post-implant annealing at temperatures between 300-400°C. Rs values were relatively insensitive to ion dose varying by one order of magnitude for an ion dose range of three orders of magnitude. Fe diffusion was apparent at an annealing temperature of 800°C

Published in:

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Date of Conference:

19-22 Apr 1993

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