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Yield enhancement prediction with statistical process simulations in an advanced poly-emitter complementary bipolar technology

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7 Author(s)
Lopez-Serrano, J. ; Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA ; Song W.Koh ; Crandell, T.L. ; Delgado, J.A.
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This paper presents an approach for yield enhancement using TCAD tools in a state-of-the-art custom IC fabrication process. We have shown that yield can be correctly predicted, which allows the use of TCAD tools for yield enhancement. The proposed methodology proved to be significantly faster and more cost-effective than the traditional approach involving fabline experiments. As the most important part of this work, we identified reasons for yield loss in an advanced poly-emitter complementary bipolar technology, and predicted a 15% yield improvement with a change in the process flow, which was confirmed by the measured results

Published in:

Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994

Date of Conference:

1-4 May 1994