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Growth of multilayered epitaxial films by pulsed excimer laser ablation

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1 Author(s)
Lowndes, Douglas H. ; Div. of Solid State, Oak Ridge Nat. Lab., TN, USA

The characteristics of pulsed laser ablation for epitaxial film growth are reviewed. New developments in the growth of heteroepitaxial multilayers, stabilization of metastable phases, and growth of semiconductor alloys with continuously variable composition, are described

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Date of Conference:

15-18 Nov 1993