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Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers

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7 Author(s)
Ralston, J.D. ; Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany ; Weisser, S. ; Schonfelder, A. ; Esquivias, I.
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A great deal of effort has been devoted to simplifying the monolithic integration, and enhancing the high-speed modulation characteristics, of GaAs-based SQW lasers. MBE-grown, vertically-compact, high-speed GaAs/AlGaAs separate-confinement double heterostructure (SCDH) devices have been developed

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Date of Conference:

15-18 Nov 1993

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