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15-Gbit/s high-speed monolithically integrated pin-HEMT photoreceiver

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4 Author(s)
Akatsu, Y. ; NTT Transmission Syst. Labs., Yokosuka, Japan ; Miyamoto, Y. ; Akahori, Y. ; Ikeda, M.

In summary a high-speed monolithically integrated photoreceiver composed of a InGaAs pin PD and InAlAs-InGaAs HEMT's (pin-HEMT) was constructed. Its sensitivity is -23.4 dBm in conjunction with an erbium-doped fiber pre-amplifier for a 15 Gbit/s NRZ lightwave signal. This is the first demonstration of the successful operation of a monolithically integrated photoreceiver at speeds beyond 10 Gbit/s

Published in:
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Date of Conference: 15-18 Nov 1993

Page(s):
215 - 216
Meeting Date :
15 Nov 1993-18 Nov 1993
Print ISBN:
0-7803-1263-5
INSPEC Accession Number:
4928236
Conference Location :
San Jose, CA
Digital Object Identifier :
10.1109/LEOS.1993.379063

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