By Topic

Transient simulation of heterojunction photodiodes-part I: computational methods

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Leblebici, Y. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Unlu, M.S. ; Sung-Mo Kang ; Onat, B.M.

A novel approach is presented for incorporating the transient solution of one-dimensional semiconductor drift-diffusion equations within a general circuit simulation tool. This approach allows simple representation of localized carrier transport models of simulated devices through equivalent circuit elements such as voltage controlled current sources and capacitors. It also lends itself to mixed-mode transient simulation of devices and circuits. The utility of the new simulation approach in state-of-the-art device design is demonstrated by the transient response analysis of a GaAs heterojunction p-i-n photodiode, and by the time-domain analysis of an integrated photoreceiver circuit

Published in:

Lightwave Technology, Journal of  (Volume:13 ,  Issue: 3 )