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A 0.65-ns, 72-kb ECL-CMOS RAM macro for a 1-Mb SRAM

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13 Author(s)
Nambu, H. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Kanetani, K. ; Idei, Y. ; Masuda, T.
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An ultrahigh-speed 72-kb ECL-CMOS RAM macro for a 1-Mb SRAM with 0.65-ns address-access time, 0.80-ns write-pulse width, and 30.24-μm 2 memory cells has been developed using 0.3-μm BiCMOS technology. Two key techniques for achieving ultrahigh speed are an ECL decoder/driver circuit with a BiCMOS inverter and a write-pulse generator with a replica memory cell. These circuit techniques can reduce access time and write-pulse width of the 72-kb RAM macro to 71% and 58% of those of RAM macros with conventional circuits. In order to reduce crosstalk noise for CMOS memory-cell arrays driven at extremely high speeds, a twisted bit-line structure with a normally on MOS equalizer is proposed. These techniques are especially useful for realizing ultrahigh-speed, high-density SRAM's, which have been used as cache and control storages in mainframe computers

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:30 ,  Issue: 4 )