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Producible GaAs-based MOVPE-grown vertical-cavity top-surface emitting lasers with record performance

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9 Author(s)
Morgan, R.A. ; Technol. Center, Honeywell Inc., Bloomington, MN, USA ; Hibbs-Brenner, M.K. ; Walterson, R.A. ; Lehman, J.A.
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The authors present state-of-the-art performance obtained from producible, 850 nm, current-guided GaAs/AlGaAs, top-emitting vertical-cavity surface-emitting lasers (VCSELs). Record CW room-temperature device performance includes threshold voltages Vth =1.55 V, submilliamp threshold currents Ith=0.68 mA, unbonded CW output power Pcw=59 mW, total wallplug efficiencies of ηnp=28% and CW lasing to Tcw=200°C. These results were obtained from the same fabrication processes and similar epigrowth designs, which exhibited 99.8% device yield across a 3"-diameter metal organic vapour phase epitaxy (MOVPE)-grown wafer

Published in:

Electronics Letters  (Volume:31 ,  Issue: 6 )

Date of Publication:

16 Mar 1995

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