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Browse Journals & Magazines > Electronics Letters ...> Volume:31 Issue:6 Help

Mid-infra-red InGaAs light-emitting diodes for optical gas sensing grown on lattice-mismatched substrates

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4 Author(s)
Grietens, B. ; IMEC, Leuven, Belgium ; Murti, M.R. ; Van Hoof, C. ; Borghs, G.

InGaAs-InAlAs light-emitting diodes were grown on lattice-mismatched GaAs substrates by molecular beam epitaxy. This makes it possible to tune the emission to the desired wavelength by changing the composition of the grown layers. The authors' diodes exhibit efficient room-temperature emission at 1.9 μm, necessary for optical sensing of water vapour

Published in:
Electronics Letters  (Volume:31 ,  Issue: 6 )

Date of Publication: 16 Mar 1995

Page(s):
502 - 503
ISSN :
0013-5194
INSPEC Accession Number:
4919512
Digital Object Identifier :
10.1049/el:19950325
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
16 Mar 1995
Sponsored by :
Institution of Engineering and Technology

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