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Q-band high-efficiency monolithic HEMT power prematch structures

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6 Author(s)
Kasody, R. ; Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; Wang, H. ; Biedenbender, M. ; Callejo, L.
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Monolithic Q-band high-efficiency prematch structures using 0.15 μm double-heterostructure pseudomorphic AlGaAs-InGaAs-GaAs HEMTs have been designed, fabricated and evaluated. The structures include a 400 μm and an 800 μm gate-width unit, demonstrating power-added efficiency of 41.6% and 37%, respectively, which represents state-of-the-art efficiency performance at this frequency. These building-blocks can be used easily to construct high-power, high-efficiency amplifiers. The circuit design, output power and efficiency performance of the prematch structures are also presented

Published in:

Electronics Letters  (Volume:31 ,  Issue: 6 )

Date of Publication:

16 Mar 1995

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