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Simple `reconciliation' MOSFET model valid in all regions

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3 Author(s)
Tsividis, Y. ; Dept. of Electr. Eng., Columbia Univ., New York, NY, USA ; Suyama, K. ; Vavelidis, K.

A single-expression MOSFET model is proposed. The model is related to a recently published one, but includes explicitly the threshold voltage at any value of the source-substrate bias. Very good accuracy in all regions, including moderate inversion, is demonstrated. The model reduces to well established expressions in particular regions

Published in:

Electronics Letters  (Volume:31 ,  Issue: 6 )