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Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding

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3 Author(s)
Mori, K. ; Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan ; Tokutome, K. ; Sugou, S.

Low-threshold room-temperature pulsed operation of InGaAs-InGaAsP multiquantum-well (MQW) lasers (λ≃1.55 μm) on Si substrates is demonstrated. These laser structures were first grown on InP substrates, then bonded at 700°C onto Si substrates with buffer layers. The mesa-stripe broad-area lasers have a threshold current density of 1.7 kA/cm2 (50 μm mesa width, 330 μm cavity length), which is comparable to the value for lasers on InP substrates

Published in:

Electronics Letters  (Volume:31 ,  Issue: 4 )