By Topic

3 V, 28 mW Si-bipolar front-end IC for 900 MHz homodyne wireless receivers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
HongMo Wang ; AT&T Bell Labs., Murray Hill, NJ, USA ; Banu, M.

A 900 MHz homodyne receiver front-end bipolar chip is presented. The circuit consists of a low-noise amplifier and two double-balanced mixers for in-phase and quadrature channels. The power supply voltage is 3 V and power dissipation is 28 mW. The measured performance includes 33.5 dB voltage gain, a 3.1 dB noise figure, -13 dBm input referred IP3, -95 dB LO leakage into the RF port on wafer probing, and less than 0.1 dB I/Q magnitude imbalance

Published in:

Electronics Letters  (Volume:31 ,  Issue: 4 )