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3 V, 28 mW Si-bipolar front-end IC for 900 MHz homodyne wireless receivers

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2 Author(s)
HongMo Wang ; AT&T Bell Labs., Murray Hill, NJ, USA ; M. Banu

A 900 MHz homodyne receiver front-end bipolar chip is presented. The circuit consists of a low-noise amplifier and two double-balanced mixers for in-phase and quadrature channels. The power supply voltage is 3 V and power dissipation is 28 mW. The measured performance includes 33.5 dB voltage gain, a 3.1 dB noise figure, -13 dBm input referred IP3, -95 dB LO leakage into the RF port on wafer probing, and less than 0.1 dB I/Q magnitude imbalance

Published in:

Electronics Letters  (Volume:31 ,  Issue: 4 )