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Ka-band monolithic low-noise amplifier using direct ion-implanted GaAs MESFETs

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7 Author(s)
Feng, M. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Scherrer, D.R. ; Apostolakis, P.J. ; Middleton, J.R.
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Ka-band monolithic low-noise amplifiers using low cost direct ion-implanted GaAs MESFETs with 0.25 μm "T"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% Idss self-biasing using a single power supply. These amplifiers achieved 2-3 dB noise figure with 30 dB associated gain at 33 GHz. These results, using low cost ion implantation techniques, rival the best GaAs p-HEMT MMIC results to date.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:5 ,  Issue: 5 )