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Modeling the heterojunction bipolar transistor for integrated circuit simulation

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3 Author(s)
Liou, J.J. ; Dept. of Electr. Eng., Central Florida Univ., Orlando, FL, USA ; Drafts, W. ; Jiann-Shiun Yuan

Based on the concept of the conventional Gummel-Poon model for Si homojunction bipolar transistors, a comprehensive physics-based large signal heterojunction bipolar transistor (HBT) model is developed for integrated-circuit simulation. The model can be implemented directly into circuit simulators such as SPICE. Heterojunction effects as well as physical properties of III-V compound materials are included. A small-signal heterojunction bipolar transistor model can be readily derived by linearizing the circuit elements in the model developed

Published in:

University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth

Date of Conference:

12-14 Jun 1989

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