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Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors

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5 Author(s)
MacDougal, M.H. ; Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA ; Dapkus, P.D. ; Pudikov, V. ; Hanmin Zhao
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An electrically-pumped, vertical-cavity, surface-emitting laser (VCSEL) using an AlAs oxide-GaAs DBR above the AlGaAs-GaAs-InGaAs gain region and a conventional AlAs-GaAs DBR below is described. By selective oxidation, devices with current flow apertures of different areas are fabricated, and in 8-μm-square devices, threshold currents as low as 0.22 mA are achieved. Being the first electrically-pumped VCSEL to utilize the oxide-based DBR, it demonstrates that the oxide-based DBR is of sufficient quality to realize submilliampere threshold currents.

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 3 )