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TRASIM: compact and efficient two-dimensional transient simulator for arbitrary planar semiconductor devices

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3 Author(s)
M. S. Obrecht ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; M. I. Elmasry ; E. L. Heasell

A new software tool TRASIM (Two-Dimensional Transient Simulator) has been developed for arbitrary, planar semiconductor devices. A finite difference technique is employed with a modified, decoupled Gummel-like method. The memory requirements are reduced significantly compared to the conventionally used Newton-like methods. TRASIM exhibits a good stability and convergence rate, and user interaction with the computational process is significantly reduced. Low memory requirements and efficiency make the method attractive for the future 3-D applications. The software uses the drift-diffusion model, with up-to-date mobility and lifetime models. External RC-chains may be connected to device electrodes. Numerical examples are presented illustrating the advantages of the modified Gummel method over the Newton method, for transient simulation

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:14 ,  Issue: 4 )